PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V-1 s-1.

PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V-1 s-1.
Liu, Y., Tolentino, J., Gibbs, M., Ihly, R., Perkins, C. L., Liu, Y., Crawford, N., Hemminger, J. C., Law, M. Nano Letters, 13, 1578-1587 (2013). PDF Online Article